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HiPerFET TM Power
MOSFET Q2-Class
(Electrically Isolated Tab)
IXFL70N60Q2
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
600V
37A
92m Ω
250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , Low Intrinsic R G
High dV/dt, Low t rr
ISOPLUS264
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
600
600
V
V
G
D
S
ISOLATED TAB
V GSS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
± 30
± 40
37
280
V
V
A
A
G = Gate
S = Source
D = Drain
I A
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
Mounting Force
35
5
20
360
-55 ... +150
150
-55 ... +150
300
260
40..120 / 9..27
A
J
V/ns
W
° C
° C
° C
° C
° C
N/lb.
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Low Q G
Low Package Inductance
Advantages
V ISOL
Weight
50/60 Hz, RMS
I ISOL ≤ 1 mA
t = 1 min
t=1s
2500
3000
8
V~
V~
g
High Power Density
Easy to Mount
Space Savings
Applications
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0 V, I D = 1mA
V GS(th) V DS = V GS , I D = 8mA
Characteristic Values
Min. Typ. Max.
600
3.0 5.5
V
V
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
I GSS
V GS = ±30 V, V DS = 0V
± 200
nA
Temperature and Lighting Controls
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 35A, Note 1
T J = 125°C
100 μ A
5 mA
92 m Ω
? 2009 IXYS CORPORATION, All Rights Reserved
DS100068A(06/09)
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